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L6114 L6115
QUAD 100 V, DMOS SWITCH
.OUTPUT .0. .SUPPLY .LOW .TTL/ .HI
VOLTAGE TO 100 V 7 RDS(ON) VOLTAGE UP TO 60 V INPUT CURRENT CMOS COMPATIBLE INPUTS GH SWITCHING FREQUENCY (200 KHz)
MULTIPOWER BCD TECHNOLOGY
Powerdip 14 + 3 + 3
DESCRIPTION Realized with the Multipower-BCD mixed bipolar/CMOS/DMOS process, the L6114/15 monolithic quad DMOS switch is designed for high current, high voltage switching applications. Each of the four switches is controlled by a logic input and all four are controlled by a common enable input. All inputs are TTL/CMOS compatible for direct connection to logic circuits. Each source is available for the insertion of the sense resistors in current control applications. Two versions are available : the L6114 mounted in a Powerdip 14+3+3 package and the L6115 in a 15lead Multiwatt package. PIN CONNECTIONS (top view)
Multiwatt-15 ORDERING NUMBERS : L6114 (Powerdip) L6115 (Multiwatt-15)
L6115 (Multiwatt-15) L6114 (Powerdip)
April 1993
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L6114 - L6115
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VCC ID IDM (*) ISD ISDM VIN VEN VS Ptot Drain-source Voltage Supply Voltage Continuous Drain Current Pulsed Drain Current Continuous Source-drain Diode Current Pulsed Source Drain Diode Current Input Voltage Enable Voltage Source Voltage Total Power Dissipation @ @ @ @ Tpins = 90 C Tcase = 90 C Tamb = 70 C Tamb = 70 C Powerdip Multiwatt -15 Powerdip Multiwatt -15 @<0>Tpins = 90 C @<0>Tcase = 90 C @<0>Tpins = 90 C @<0>Tcase = 90 C Powerdip Multiwatt -15 Powerdip Multiwatt -15 Powerdip Multiwatt -15 Powerdip Multiwatt -15 Parameter Value 100 60 1.5 3 5 8 1.5 3 5 8 7 7 - 1 to + 4 4.3 20 1.3 2.3 - 40 to + 150 Unit V V A A A A A A A A V V V W W W W C
Tstg, Tj
Storage and Junction Temperature Range
(*) Pulse width 300 s, duty cycle 10 %. Note : ID, IDM, ISD, ISDM are given per channel.
THERMAL DATA
Symbol Rth j-pins Rth j-case Rth j-amb Parameter Thermal Resistance Junction-pins Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Max. Powerdip 14 65 Multiwatt-15 3 35 Unit
o o o
C/W C/W C/W
2/11
L6114 - L6115
ELECTRICAL CHARACTERISTICS (Tj = 25oC, VCC = 40V, unless otherwise specified)
Symbol VCC ICC Parameter Supply Voltage Supply Current All VIN = H VEN = Square Wave (200kHz, 50 % DC) VEN = L ID = 1mA, VEN = L VEN = L VDS = 100V VDS = 80V, Tj = 125C VCC 14V, ID = 1.5A VEN, VIN = H - 0.3 2 VIN, VEN = L VIN, VEN = H 300 ID = 1.5A See Test Circuit and Waveforms ISD = 1.5A, VEN = L ISD = 1.5A - VIN, VEN = H 100 400 100 1.5 1.2 100 1 1 0.7 0.8 7 - 100 10 V V A A ns ns ns ns V V Test Conditions Min. 14 9 Typ. Max. 48 Unit V mA
IQ BVDSS IDSS
Quiescent Current Drain Source Breakdown Voltage Output Leakage Current
2
3
mA V mA
RDS (on) (*) VIN L, VEN L VIN H, VEN H IIN L, IEN L IIN H, IEN H td (on) tr td (off) tf VSD (*) VSD (on) (*)
Static Drain-source on Resistance Input Low Voltage Input High Voltage Input Low Current Input High Current Turn on Delay Time Rise Time Turn off Delay Time Fall Time Source Drain Diode Forward Voltage Source Drain Forward Voltage
(*) Pulse test : pulse width = 300 s, duty cycle = 2 %.
3/11
L6114 - L6115
SWITCHING TIMES RESISTIVE LOAD Figure 1 : Test Circuit (Pins x = Powerdip ; Pins (x) = Multiwatt).
Figure 2 : Waveforms.
a)
b)
4/11
L6114 - L6115
TEST CIRCUIT (Pins x = Powerdip ; Pins (x) = Multiwatt) Figure 3 : Quiescent Current and Output Leakage Current.. Figure 4 : Supply Current.
VEN = 0.8 V
VIN = 2 V VEN = square wave
{
f = 200 KHz DC = 50 %
Figure 5 : RDS (on).
Figure 6 : Source-drain Diode Forward Voltage.
VCC = 14 V, VIN = 2 V, f = 3 KHz ID = square wave, (*) VDS is taken during the time in which the VDS ID = 1.5 A RDS = ISD square wave, 1.5 3 KHz f= VIN = 2 V,
VEN = 2V DC = 2 %
-
Set VEN = 0.8 V for VSD (taken during the time in which ISD = 1.5 A) Set VEN = 2 V for VSD (on) (taken during the time in which ISD = 1.5 A) 5/11
DC = 2 %
L6114 - L6115
Figure 7 : Input Logic Levels
Set Set Set Set
V = 0.8 V V = 0.8 V V= 2V V= 2V
S1,S2 open S1,S2 close S1,S2 open S1,S2 close
for for for for
IIN L and IEN L VIN L and VEN H IIN H and IEN H VIN H and VEN H
Figure 8 : Static Drain-source on Resistance.
Figure 9 : Normalized Break-down Voltage vs. Temperature.
6/11
L6114 - L6115
Figure 10 : Normalized on Resistance vs. Temperature. Figure 11 : Typical Source-drain Diode Forward Voltage.
Figure 12 : Rth j-amb vs. Dissipated Power(Multiwatt).
(*) Rth 9 C/W.
7/11
L6114 - L6115
Figure 13 : Transient Thermal Resistance for Single Pulses (Multiwatt).
Figure 14 : Peak Transient Thermal Resistance vs.Pulse width and duty cycle (Multiwatt).
8/11
L6114 - L6115
POWERDIP20 PACKAGE MECHANICAL DATA
DIM. MIN. a1 B b b1 D E e e3 F I L Z 3.30 1.27 8.80 2.54 22.86 7.10 5.10 0.130 0.050 0.38 0.51 0.85 0.50 0.50 24.80 0.346 0.100 0.900 0.280 0.201 0.015 1.40 mm TYP. MAX. MIN. 0.020 0.033 0.020 0.020 0.976 0.055 inch TYP. MAX.
9/11
L6114 - L6115
MULTIWATT15 PACKAGE MECHANICAL DATA
DIM. A B C D E F G G1 H1 H2 L L1 L2 L3 L4 L7 M M1 S S1 Dia1 22.1 22 17.65 17.25 10.3 2.65 4.2 4.5 1.9 1.9 3.65 17.5 10.7 4.3 5.08 1 0.49 0.66 1.14 17.57 19.6 20.2 22.6 22.5 18.1 17.75 10.9 2.9 4.6 5.3 2.6 2.6 3.85 0.870 0.866 0.695 0.679 0.406 0.104 0.165 0.177 0.075 0.075 0.144 0.689 0.421 0.169 0.200 1.27 17.78 0.55 0.75 1.4 17.91 0.019 0.026 0.045 0.692 0.772 0.795 0.890 0.886 0.713 0.699 0.429 0.114 0.181 0.209 0.102 0.102 0.152 0.050 0.700 mm MIN. TYP. MAX. 5 2.65 1.6 0.039 0.022 0.030 0.055 0.705 MIN. inch TYP. MAX. 0.197 0.104 0.063
10/11
L6114 - L6115
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved MULTIWATT(R) is a Registered Trademark of SGS-THOMSON Microelectronics SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.
11/11
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